parameter l value unit collector-base voltage v cbo 1100 v collector-emitter voltage v ceo 800 v emitter-base voltage v ebo 7.0 v collector current i c 3.0 a base current i b 1.5 a total dissipation at p tot 50 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c KSC5027 description parameter symbol test conditions min. typ. max. unit collector cut-off current i cbo v ce =800v, i e =0 10 ua emitter cut-off current i ebo v eb =5v, i c =0 10 ua collector-emitter sustaining voltage v ceo i c =10ma, i b =0 800 v dc current gain h fe(1) v ce =5v, i c =0.2a 10 40 h fe(2) v ce =5v, i c =1.0a 8 collector-emitter saturation voltage v ce(sat) i c =1.5a,i b =0.3a 2.0 v base-emitter saturation voltage v be(sat) i c =1.5a,i b =0.3a 1.5 v current gain bandwidth product f t v ce =10v, i c =0.2a 15 mhz output capacitance c ob v cb =10v,i e =0,f=1.0mhz 60 pf turn off time t s i c =5i b1 =-2.5i b2 =2.0a, 3.0 us high voltage and high reliability product specification npn silicon transistor high speed switching wide soa electrical characteristics ( ta = 25 ) absolute maximum ratings ( ta = 25 ) to-220 h fe classification classification n r o h fe1 10 ~ 20 15 ~ 30 20 ~ 40 tiger electronic co.,ltd
|
